Preparation and luminescence characterization of GGAG:Ce{sup 3+},B{sup 3+} for a white light-emitting diode

We prepared Gd{sub 3}Ga{sub 2}Al{sub 3}O{sub 12} (GGAG) co-doped with trivalent cerium and boron ions and investigated its luminescence properties as a function of the B{sup 3+} concentration. The luminescence intensity was enhanced markedly by adding B{sup 3+} as a co-dopant. The non-boron-doped GG...

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Bibliographic Details
Published in:Materials research bulletin 2008-08, Vol.43 (8-9)
Main Authors: Kang, Jun-Gill, Kim, Myung-Kyo, Kim, Kwang-Bok
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
BORON IONS
CERIUM IONS
DOPED MATERIALS
GADOLINIUM COMPOUNDS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LIGHT EMITTING DIODES
LUMINESCENCE
MATERIALS SCIENCE
OXIDES
X-RAY DIFFRACTION
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Summary:We prepared Gd{sub 3}Ga{sub 2}Al{sub 3}O{sub 12} (GGAG) co-doped with trivalent cerium and boron ions and investigated its luminescence properties as a function of the B{sup 3+} concentration. The luminescence intensity was enhanced markedly by adding B{sup 3+} as a co-dopant. The non-boron-doped GGAG:Ce{sup 3+} converted less than 10% of the absorbed blue light into luminescence. As the B{sup 3+} concentration increased, Q increased and reached a maximum of Q = 21% at 1.5 moles in GGAG:Ce{sup 3+}. White light closer to daylight with good color-rendering index properties was generated with the proper combination of yellow emission from GGAG:Ce{sup 3+},B{sup 3+} and blue emission from a GaN chip.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2007.10.001