Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe - Al 2 O 3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system g...

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Bibliographic Details
Published in:Applied physics letters 2008-10, Vol.93 (16), p.163111-163111-3
Main Authors: Robertson, J., Zhong, G., Telg, H., Thomsen, C., Warner, J. H., Briggs, G. A. D., Dettlaff-Weglikowska, U., Roth, S.
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
CARBON
CATALYSTS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DENSITY
INTEGRATED CIRCUITS
MATERIALS SCIENCE
NANOTUBES
PLASMA
THIN FILMS
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Summary:We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe - Al 2 O 3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1 ∕ 3 of metallic tubes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3000061