Particle emission from chemically enhanced electron-beam-induced etching of Si: An approach for zero-energy secondary-ion mass spectrometry

The mechanisms of particle emission resulting from electron-beam-induced etching of Si surfaces have been studied. A detailed analysis of the obtained mass spectra and kinetic-energy distributions shows that SiF{sub x} (x=0-2) species are predominantly desorbed from the surface when exposed to XeF{s...

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Bibliographic Details
Published in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2009-01, Vol.79 (3), Article 035305
Main Authors: Vanhove, N., Lievens, P., Vandervorst, W.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DESORPTION
DISTRIBUTION
ELECTRON BEAMS
EMISSION
ETCHING
IONS
MASS SPECTRA
MASS SPECTROSCOPY
PARTICLES
RESOLUTION
SEMICONDUCTOR MATERIALS
SILICON
SILICON FLUORIDES
SURFACES
XENON FLUORIDES
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Summary:The mechanisms of particle emission resulting from electron-beam-induced etching of Si surfaces have been studied. A detailed analysis of the obtained mass spectra and kinetic-energy distributions shows that SiF{sub x} (x=0-2) species are predominantly desorbed from the surface when exposed to XeF{sub 2} etching gas and the electron beam. Based on these observations, we demonstrate a unique concept for materials analysis, termed zero-energy secondary-ion mass spectrometry, which can provide very high depth resolution and accurate near-surface profiles.
ISSN:1098-0121
1550-235X
DOI:10.1103/PhysRevB.79.035305