Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD

The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of ∼10 17 cm −3 and a uninten...

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Bibliographic Details
Published in:Materials research bulletin 2008-12, Vol.43 (12), p.3614-3620
Main Authors: Yang, T.P., Zhu, H.C., Bian, J.M., Sun, J.C., Dong, X., Zhang, B.L., Liang, H.W., Li, X.P., Cui, Y.G., Du, G.T.
Format: Article
Language:English
Subjects:
A. Semiconductors
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ELECTROLUMINESCENCE
GALLIUM NITRIDES
HETEROJUNCTIONS
HOLES
LAYERS
LIGHT EMITTING DIODES
MATERIALS SCIENCE
PHOTOLUMINESCENCE
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPECTRA
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES
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Summary:The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of ∼10 17 cm −3 and a unintentionally doped n-type ZnO layer with an electron concentration of ∼10 18 cm −3. A distinct blue-violet electroluminescence with a dominant emission peak centered at ∼415 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra, and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2008.02.020