Nanostructured zinc oxide films synthesized by successive chemical solution deposition for gas sensor applications

Nanostructured ZnO thin films have been deposited using a successive chemical solution deposition method. The structural, morphological, electrical and sensing properties of the films were studied for different concentrations of Al-dopant and were analyzed as a function of rapid photothermal process...

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Bibliographic Details
Published in:Materials research bulletin 2009-01, Vol.44 (1), p.63-69
Main Authors: Lupan, O., Chow, L., Shishiyanu, S., Monaico, E., Shishiyanu, T., Şontea, V., Roldan Cuenya, B., Naitabdi, A., Park, S., Schulte, A.
Format: Article
Language:English
Subjects:
A. Nanostructures
A. Oxides
B. Chemical synthesis
CARBON DIOXIDE
D. Electrical properties
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
GRAIN SIZE
MATERIALS SCIENCE
NANOSTRUCTURES
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SENSITIVITY
SENSORS
SYNTHESIS
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
ZINC OXIDES
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Summary:Nanostructured ZnO thin films have been deposited using a successive chemical solution deposition method. The structural, morphological, electrical and sensing properties of the films were studied for different concentrations of Al-dopant and were analyzed as a function of rapid photothermal processing temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron and micro-Raman spectroscopy. Electrical and gas sensitivity measurements were conducted as well. The average grain size is 240 and 224 Å for undoped ZnO and Al-doped ZnO films, respectively. We demonstrate that rapid photothermal processing is an efficient method for improving the quality of nanostructured ZnO films. Nanostructured ZnO films doped with Al showed a higher sensitivity to carbon dioxide than undoped ZnO films. The correlations between material compositions, microstructures of the films and the properties of the gas sensors are discussed.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2008.04.006