In situ electromigration damage in Al interconnect lines in the SEM and the influence of grain orientation

Unpassivated AlSiCu interconnects (thickness 1 {mu}m, width 8 and 1.4 {mu}m, on SiO{sub 2}) were tested for electromigration in situ in the SEM under accelerated loading conditions. To examine the influence of grain orientation on electromigration damage, orientation mapping of the interconnects was...

Full description

Saved in:
Bibliographic Details
Main Authors: Buerke, Axel, Wendrock, Horst, Wetzig, Klaus
Format: Conference Proceeding
Language:English
Subjects:
ALUMINIUM
BACKSCATTERING
COPPER
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
ELECTRONS
FIBERS
GRAIN BOUNDARIES
GRAIN ORIENTATION
INTEGRATED CIRCUITS
INTERMETALLIC COMPOUNDS
MATERIALS SCIENCE
NONDESTRUCTIVE TESTING
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SILICA
SILICON
TEXTURE
THIN FILMS
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Unpassivated AlSiCu interconnects (thickness 1 {mu}m, width 8 and 1.4 {mu}m, on SiO{sub 2}) were tested for electromigration in situ in the SEM under accelerated loading conditions. To examine the influence of grain orientation on electromigration damage, orientation mapping of the interconnects was carried out prior to testing using the EBSD technique (Electron BackScatter Diffraction or Backscatter Kikuchi Pattern). Damage micrographs and orientation data were correlated with respect to microstructure (polycrystalline/bamboo), deviation from fibre texture and grain boundary properties (axis/angle, CSL model). It was found that not the deviation from fibre texture, but the misorientation class of individual grain boundaries and their course in relation to the current direction are decisive factors for the damage location where the fatal defects occur.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.59904