Diffusion of electrons scattered by short-range impurities in a quantizing magnetic field

Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2008-04, Vol.106 (4), p.788-792
Main Authors: Andreev, S. P., Pavlova, T. V.
Format: Article
Language:English
Subjects:
Classical and Quantum Gravitation
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DIFFUSION
EIGENSTATES
Electronic Properties of Solids
ELECTRONS
Elementary Particles
IMPURITIES
LASERS
MAGNETIC FIELDS
Particle and Nuclear Physics
Physics
Physics and Astronomy
POTENTIALS
Quantum Field Theory
Relativity Theory
SCATTERING
SCATTERING AMPLITUDES
SEMICONDUCTOR MATERIALS
Solid State Physics
WAVE FUNCTIONS
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Summary:Formulas for transverse diffusion and conductivity in a semiconductor are obtained for electrons scattered by neutral impurities in a quantizing magnetic field. The formulas are valid for an impurity potential of arbitrary depth. Based on Kubo’s theory [1], calculations are performed using electron wavefunctions of the problem of single-impurity scattering in a magnetic field [2]. The poles of the scattering amplitude correctly determine electron eigenstates and magnetic impurity states. As a result, an exact expression is found for the dependence of transverse diffusion coefficient D ⊥ on longitudinal electron energy ɛ due to scattering by short-range (neutral) impurities. The behavior of D ⊥ (ɛ) is examined over an interval of magnetic field strength for several values of impurity potential depth. The experimental observability of diffusion and conductivity using IR lasers is discussed.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776108040183