Ion Beam Layer Separation of Cadmium Zinc Telluride

We have investigated the approach of ion induced layer separation process for layer splitting from Cadmium Zinc Telluride (CZT) bulk single crystal and transferring and bonding the separated layers with Silicon (Si) wafers. Layer separation experiments have been carried out at UES using 1 MeV H+ ion...

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Bibliographic Details
Main Authors: Bhattacharya, Rabi S, He, P, Xu, Y, Goorsky, M
Format: Conference Proceeding
Language:English
Subjects:
ANNEALING
CADMIUM TELLURIDES
CRACKING
CRACKS
GLASS
HYDROGEN IONS 1 PLUS
ION BEAMS
ION IMPLANTATION
LAYERS
MASS SPECTROSCOPY
MATERIALS SCIENCE
MEV RANGE 01-10
MINIMIZATION
MONOCRYSTALS
SEPARATION PROCESSES
SILICON
ZINC TELLURIDES
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Summary:We have investigated the approach of ion induced layer separation process for layer splitting from Cadmium Zinc Telluride (CZT) bulk single crystal and transferring and bonding the separated layers with Silicon (Si) wafers. Layer separation experiments have been carried out at UES using 1 MeV H+ ions from the high energy accelerator (1.7 MV Tandetron). Ion dose and annealing temperature for complete separation of 1 cmX1 cm size layers have been optimized. Bonding of CZT with Si was accomplished using various IR transmitting chalcogenide glasses. Cracking of separated CZT films was occurring for chalcogenide glass bonded films. Optimization of thermal treatment has led to the minimization of such cracks. Detailed characterizations of the separated films will be presented.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3033597