Approaches to USJ Formation Beyond Molecular Implantation

• Main Authors: Hatem, C, Renau, A, Godet, L, Kontos, A, Papasouliotis, G, England, J, Arevalo, E
• Format: Conference Proceeding
• Language: English
• Subjects: AMORPHOUS STATE; ANNEALING; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DAMAGE; DEFECTS; INTEGRATED CIRCUITS; ION IMPLANTATION; MANUFACTURING; PHYSICAL RADIATION EFFECTS
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/1.3033646

As junction depth requirements approach sub 10 nm and the sensitivity to residual implant damage continues to increase, the capability to produce abrupt, shallow profiles while maintaining low residual damage becomes a difficult challenge. Implantation induced amorphization has been widely applied to reduce channeling tails of implanted dopant profiles for integrated circuit manufacturing. This has been required to meet aggressive junction depth targets. The problem, however, is that pre-amorphization creates high defect densities that remain near the former amorphous-crystalline interface post anneal. These end of range (EOR) defects become of greater concern as the industry begins to move towards millisecond anneal technologies. Millisecond anneal, while capable of close to diffusionless activation and abrupt junctions, has caused concern for its inability to fully repair these EOR defects. There has been a recent focus on removing traditional PAI through molecular implantation with limited success. Towards this end we have investigated alternative techniques to reduce EOR damage while maintaining the junction depth, sheet resistance and abruptness. Here we describe the results of two of these techniques. The subsequent reduction in EOR through the use of each process and the resultant Rs, junction depth and abruptness are detailed.