Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation

This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF3 and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are st...

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Bibliographic Details
Main Authors: Zschatzsch, G, Vandervorst, W, Hoffmann, T, Goossens, J, Everaert, J-L, del Agua Borniquel, J I, Poon, T
Format: Conference Proceeding
Language:English
Subjects:
AMORPHOUS STATE
ANNEALING
BORON
BORON FLUORIDES
INTEGRATED CIRCUITS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
LASERS
MASS SPECTROSCOPY
MATERIALS SCIENCE
PLASMA
SILICON OXIDES
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Summary:This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF3 and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are studied using Secondary Ion Mass Spectrometry, sheet resistance and using four point probe and RsL. Profiles with junction depths ranging from 10-12 nm and sheet resistance values below 800 Ohm/sq are readily achievable.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3033662