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Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation
This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF3 and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are st...
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| Format: | Conference Proceeding |
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| container_end_page | 464 |
| container_issue | 1 |
| container_start_page | 461 |
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| container_volume | 1066 |
| creator | Zschatzsch, G Vandervorst, W Hoffmann, T Goossens, J Everaert, J-L del Agua Borniquel, J I Poon, T |
| description | This study investigates the basic aspects of junction formation using Plasma Immersion Ion Implantation using BF3 and addresses the role of (pre)amorphization, C(F)-co-implantation, plasma parameters (bias, dose) and the thermal anneal cycle (spike versus msec laser anneal). The basic physics are studied using Secondary Ion Mass Spectrometry, sheet resistance and using four point probe and RsL. Profiles with junction depths ranging from 10-12 nm and sheet resistance values below 800 Ohm/sq are readily achievable. |
| doi_str_mv | 10.1063/1.3033662 |
| format | conference_proceeding |
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| fulltext | fulltext |
| identifier | ISSN: 0094-243X |
| ispartof | AIP conference proceedings, 2008, Vol.1066 (1), p.461-464 |
| issn | 0094-243X 1551-7616 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21251704 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | AMORPHOUS STATE ANNEALING BORON BORON FLUORIDES INTEGRATED CIRCUITS ION IMPLANTATION ION MICROPROBE ANALYSIS LASERS MASS SPECTROSCOPY MATERIALS SCIENCE PLASMA SILICON OXIDES |
| title | Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion Implantation |
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