Fast optical recording media based on semiconductor nanostructures for image recording and processing

Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magn...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-11, Vol.42 (11), p.1362-1369
Main Authors: Kasherininov, P. G., Tomasov, A. A.
Format: Article
Language:English
Subjects:
CADMIUM TELLURIDES
GALLIUM ARSENIDES
LIQUID CRYSTALS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NANOSTRUCTURES
PHOTOSENSITIVITY
Physics
Physics and Astronomy
Physics of Semiconductor Devices
SEMICONDUCTOR MATERIALS
SPATIAL RESOLUTION
VELOCITY
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Summary:Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10 −2 V/cm 2 , and a spatial resolution of 5–10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608110237