Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2008-09, Vol.42 (9), Article 1055
Main Authors: Seredin, P. V., Domashevskaya, É. P., Lukin, A. N., Arsent’ev, I. N., Vinokurov, D. A., Tarasov, I. S.
Format: Article
Language:English
Subjects:
Electrons
Epitaxial growth
EPITAXY
Gallium arsenide
GALLIUM ARSENIDES
Heterostructures
INDIUM ARSENIDES
Indium gallium arsenides
INDIUM PHOSPHIDES
Infrared reflection
Infrared spectra
Interfaces
Lattice vibration
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Multilayers
Physics
Physics and Astronomy
QUANTUM DOTS
REFLECTION
Semiconductor Structures
SPECTRA
STRESSES
Substrates
Surfaces
THICKNESS
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Summary:The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782608090108