Hydrodynamic modeling of optically excited terahertz plasma oscillations in nanometric field effect transistors

We present a hydrodynamic model to simulate the excitation by optical beating of plasma waves in nanometric field effect transistors. The biasing conditions are whatever possible from Ohmic to saturation conditions. The model provides a direct calculation of the time-dependent voltage response of th...

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Bibliographic Details
Published in:Applied physics letters 2009-05, Vol.94 (19), p.192109-192109-3
Main Authors: Marinchio, H., Sabatini, G., Palermo, C., Pousset, J., Torres, J., Chusseau, L., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V.
Format: Article
Language:English
Subjects:
ELECTRIC POTENTIAL
ELECTRON MOBILITY
Engineering Sciences
FIELD EFFECT TRANSISTORS
HYDRODYNAMIC MODEL
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
Optics
Photonic
PLASMA
PLASMA SIMULATION
PLASMA WAVES
TEMPERATURE RANGE 0273-0400 K
TIME DEPENDENCE
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Summary:We present a hydrodynamic model to simulate the excitation by optical beating of plasma waves in nanometric field effect transistors. The biasing conditions are whatever possible from Ohmic to saturation conditions. The model provides a direct calculation of the time-dependent voltage response of the transistors, which can be separated into an average and a harmonic component. These quantities are interpreted by generalizing the concepts of plasma transit time and wave increment to the case of nonuniform channels. The possibilities to tune and to optimize the plasma resonance at room temperature by varying the drain voltage are demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3137189