Interconnected Si nanocrystals forming thin films with controlled bandgap values

Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust...

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Bibliographic Details
Published in:Applied physics letters 2009-08, Vol.95 (8)
Main Authors: Nychyporuk, T., Zakharko, Yu, Lysenko, V., Lemiti, M.
Format: Article
Language:English
Subjects:
ABSORPTION
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
DUSTS
ENERGY GAP
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
OPTICAL PROPERTIES
PARTICLES
PLASMA
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
THIN FILMS
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Summary:Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3216072