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Interconnected Si nanocrystals forming thin films with controlled bandgap values
Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust...
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Published in: | Applied physics letters 2009-08, Vol.95 (8) |
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cited_by | cdi_FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3 |
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container_title | Applied physics letters |
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creator | Nychyporuk, T. Zakharko, Yu Lysenko, V. Lemiti, M. |
description | Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications. |
doi_str_mv | 10.1063/1.3216072 |
format | article |
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ispartof | Applied physics letters, 2009-08, Vol.95 (8) |
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language | eng |
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source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | ABSORPTION CHEMICAL VAPOR DEPOSITION CRYSTAL GROWTH CRYSTALS DUSTS ENERGY GAP NANOSCIENCE AND NANOTECHNOLOGY NANOSTRUCTURES OPTICAL PROPERTIES PARTICLES PLASMA SEMICONDUCTOR MATERIALS SILICON SOLAR CELLS THIN FILMS |
title | Interconnected Si nanocrystals forming thin films with controlled bandgap values |
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