Loading…

Interconnected Si nanocrystals forming thin films with controlled bandgap values

Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2009-08, Vol.95 (8)
Main Authors: Nychyporuk, T., Zakharko, Yu, Lysenko, V., Lemiti, M.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3
cites cdi_FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3
container_end_page
container_issue 8
container_start_page
container_title Applied physics letters
container_volume 95
creator Nychyporuk, T.
Zakharko, Yu
Lysenko, V.
Lemiti, M.
description Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.
doi_str_mv 10.1063/1.3216072
format article
fullrecord <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_21294288</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3216072</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3</originalsourceid><addsrcrecordid>eNotkE1LAzEYhIMoWKsH_0HAk4eteZPNJnuUorVQUFDPIZuPNrLNliQq_feudE_DwDwDMwjdAlkAadgDLBiFhgh6hmZAhKgYgDxHM0IIq5qWwyW6yvlrtJwyNkNv61hcMkOMzhRn8XvAUcfBpGMuus_YD2kf4haXXYjYh36f8W8oOzwSJQ19PyKdjnarD_hH998uX6MLP4LuZtI5-nx--li-VJvX1Xr5uKkM5aJUwGrBuW15rbXlneksF5xJX3vwgkvZ1laA0KbmRLYdOGe8tsKwxjJBHLdsju5OvUMuQWUTijO7aYeiQNuaSjmm7k8pk4ack_PqkMJep6MCov4PU6Cmw9gfhPxdwQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Interconnected Si nanocrystals forming thin films with controlled bandgap values</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Nychyporuk, T. ; Zakharko, Yu ; Lysenko, V. ; Lemiti, M.</creator><creatorcontrib>Nychyporuk, T. ; Zakharko, Yu ; Lysenko, V. ; Lemiti, M.</creatorcontrib><description>Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3216072</identifier><language>eng</language><publisher>United States</publisher><subject>ABSORPTION ; CHEMICAL VAPOR DEPOSITION ; CRYSTAL GROWTH ; CRYSTALS ; DUSTS ; ENERGY GAP ; NANOSCIENCE AND NANOTECHNOLOGY ; NANOSTRUCTURES ; OPTICAL PROPERTIES ; PARTICLES ; PLASMA ; SEMICONDUCTOR MATERIALS ; SILICON SOLAR CELLS ; THIN FILMS</subject><ispartof>Applied physics letters, 2009-08, Vol.95 (8)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3</citedby><cites>FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,782,784,885,27922,27923</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21294288$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Nychyporuk, T.</creatorcontrib><creatorcontrib>Zakharko, Yu</creatorcontrib><creatorcontrib>Lysenko, V.</creatorcontrib><creatorcontrib>Lemiti, M.</creatorcontrib><title>Interconnected Si nanocrystals forming thin films with controlled bandgap values</title><title>Applied physics letters</title><description>Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.</description><subject>ABSORPTION</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTALS</subject><subject>DUSTS</subject><subject>ENERGY GAP</subject><subject>NANOSCIENCE AND NANOTECHNOLOGY</subject><subject>NANOSTRUCTURES</subject><subject>OPTICAL PROPERTIES</subject><subject>PARTICLES</subject><subject>PLASMA</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SILICON SOLAR CELLS</subject><subject>THIN FILMS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0HAk4eteZPNJnuUorVQUFDPIZuPNrLNliQq_feudE_DwDwDMwjdAlkAadgDLBiFhgh6hmZAhKgYgDxHM0IIq5qWwyW6yvlrtJwyNkNv61hcMkOMzhRn8XvAUcfBpGMuus_YD2kf4haXXYjYh36f8W8oOzwSJQ19PyKdjnarD_hH998uX6MLP4LuZtI5-nx--li-VJvX1Xr5uKkM5aJUwGrBuW15rbXlneksF5xJX3vwgkvZ1laA0KbmRLYdOGe8tsKwxjJBHLdsju5OvUMuQWUTijO7aYeiQNuaSjmm7k8pk4ack_PqkMJep6MCov4PU6Cmw9gfhPxdwQ</recordid><startdate>20090824</startdate><enddate>20090824</enddate><creator>Nychyporuk, T.</creator><creator>Zakharko, Yu</creator><creator>Lysenko, V.</creator><creator>Lemiti, M.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20090824</creationdate><title>Interconnected Si nanocrystals forming thin films with controlled bandgap values</title><author>Nychyporuk, T. ; Zakharko, Yu ; Lysenko, V. ; Lemiti, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>ABSORPTION</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTALS</topic><topic>DUSTS</topic><topic>ENERGY GAP</topic><topic>NANOSCIENCE AND NANOTECHNOLOGY</topic><topic>NANOSTRUCTURES</topic><topic>OPTICAL PROPERTIES</topic><topic>PARTICLES</topic><topic>PLASMA</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SILICON SOLAR CELLS</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nychyporuk, T.</creatorcontrib><creatorcontrib>Zakharko, Yu</creatorcontrib><creatorcontrib>Lysenko, V.</creatorcontrib><creatorcontrib>Lemiti, M.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nychyporuk, T.</au><au>Zakharko, Yu</au><au>Lysenko, V.</au><au>Lemiti, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Interconnected Si nanocrystals forming thin films with controlled bandgap values</atitle><jtitle>Applied physics letters</jtitle><date>2009-08-24</date><risdate>2009</risdate><volume>95</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Interconnected Si nanocrystals forming homogeneous thin films with controlled bandgap values from 1.2 to 2.9 eV were formed by pulsed plasma enhanced chemical vapor deposition technique under dusty plasma conditions. The chosen values of plasma duration time correspond to specific phases of the dust nanoparticle growth. Structural and optical properties of the deposited nanostructured films are described in details. These nanocrystalline Si thin films seem to be promising candidates for all-Si tandem solar cell applications.</abstract><cop>United States</cop><doi>10.1063/1.3216072</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2009-08, Vol.95 (8)
issn 0003-6951
1077-3118
language eng
recordid cdi_osti_scitechconnect_21294288
source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects ABSORPTION
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CRYSTALS
DUSTS
ENERGY GAP
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
OPTICAL PROPERTIES
PARTICLES
PLASMA
SEMICONDUCTOR MATERIALS
SILICON SOLAR CELLS
THIN FILMS
title Interconnected Si nanocrystals forming thin films with controlled bandgap values
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T20%3A30%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Interconnected%20Si%20nanocrystals%20forming%20thin%20films%20with%20controlled%20bandgap%20values&rft.jtitle=Applied%20physics%20letters&rft.au=Nychyporuk,%20T.&rft.date=2009-08-24&rft.volume=95&rft.issue=8&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3216072&rft_dat=%3Ccrossref_osti_%3E10_1063_1_3216072%3C/crossref_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c257t-134755d954aad5bcbd57538f4f1f758894d717ac45089b1eecfad7c36d370e5d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true