3 W continuous-wave room temperature single-facet emission from quantum cascade lasers based on nonresonant extraction design approach

A strain-balanced, InP-based quantum cascade laser structure, designed for light emission at 4.6   μ m using a new nonresonant extraction design approach, was grown by molecular beam epitaxy. Removal of the restrictive two-phonon resonant condition, currently used in most structure designs, allows s...

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Bibliographic Details
Published in:Applied physics letters 2009-10, Vol.95 (14), p.141113-141113-3
Main Authors: Lyakh, A., Maulini, R., Tsekoun, A., Go, R., Pflügl, C., Diehl, L., Wang, Q. J., Capasso, Federico, Patel, C. Kumar N.
Format: Article
Language:English
Subjects:
CRYSTAL GROWTH
CURRENT DENSITY
INDIUM PHOSPHIDES
LASERS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHONONS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT
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Summary:A strain-balanced, InP-based quantum cascade laser structure, designed for light emission at 4.6   μ m using a new nonresonant extraction design approach, was grown by molecular beam epitaxy. Removal of the restrictive two-phonon resonant condition, currently used in most structure designs, allows simultaneous optimization of several design parameters influencing laser performance. Following the growth, the structure was processed in buried heterostructure. Maximum single-ended continuous-wave optical power of 3 W was obtained at 293 K for devices with stripe dimensions of 5   mm × 11.6   μ m . Corresponding maximum wallplug efficiency and threshold current density were measured to be 12.7% and 0.86   kA / cm 2 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3238263