ZnO-based metal-semiconductor field-effect transistors on glass substrates

We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect transistors (MESFETs). The n -type ZnO thin-film channels were grown by pulsed-laser deposition and MESFETs were processed by reactive dc sputteri...

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Bibliographic Details
Published in:Applied physics letters 2009-10, Vol.95 (15), p.153503-153503-3
Main Authors: Frenzel, H., Lorenz, M., Lajn, A., von Wenckstern, H., Biehne, G., Hochmuth, H., Grundmann, M.
Format: Article
Language:English
Subjects:
BOROSILICATE GLASS
CARRIER MOBILITY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ENERGY BEAM DEPOSITION
FIELD EFFECT TRANSISTORS
LASER RADIATION
MATERIALS SCIENCE
METALS
PULSED IRRADIATION
QUARTZ
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC OXIDES
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Summary:We investigate the influence of quartz glass and borosilicate glass substrates on the electrical properties of ZnO-based metal-semiconductor field-effect transistors (MESFETs). The n -type ZnO thin-film channels were grown by pulsed-laser deposition and MESFETs were processed by reactive dc sputtering of Ag x O -Schottky gate contacts. All devices are in the normally-off state. They exhibit very low off-currents in the range of 10 − 13 A and on/off ratios of maximum 6 decades. The channel mobilities are highest for ZnO on quartz with 1.3 cm 2 / V s . The glass substrates introduce a compensating effect on the conduction of the ZnO channel resulting in higher on/off-voltages and lower on-current.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3242414