Tunable electrical and optical properties of hafnium nitride thin films

We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculatio...

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Bibliographic Details
Published in:Applied physics letters 2010-02, Vol.96 (7), p.071914-071914-3
Main Authors: Farrell, I. L., Reeves, R. J., Preston, A. R. H., Ludbrook, B. M., Downes, J. E., Ruck, B. J., Durbin, S. M.
Format: Article
Language:English
Subjects:
ABSORPTION
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
EMISSION SPECTROSCOPY
ENERGY BEAM DEPOSITION
EPITAXY
HAFNIUM COMPOUNDS
HAFNIUM NITRIDES
IONIZING RADIATIONS
IRRADIATION
LASER RADIATION
MAGNESIUM COMPOUNDS
MAGNESIUM OXIDES
MATERIALS SCIENCE
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
PULSED IRRADIATION
RADIATIONS
REFRACTORY METAL COMPOUNDS
SOFT X RADIATION
SORPTION
SPECTRA
SPECTROSCOPY
SURFACE COATING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
X RADIATION
X-RAY SPECTRA
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Summary:We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films' reflectance further toward the UV, and we relate this observation to the electronic structure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3327329