Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scav...

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Bibliographic Details
Published in:Applied physics letters 2010-05, Vol.96 (22)
Main Authors: Seo, Hyungtak, Cho, Young-Je, Kim, Jinwoo, M.bobade, Santosh, Park, Kyoung-Youn, Lee, Jaegab, Choi, Duck-Kyun
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
BOSONS
CARRIER DENSITY
CARRIER MOBILITY
CHALCOGENIDES
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FERMI LEVEL
FERMIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LEPTONS
MASSLESS PARTICLES
MATERIALS
MATERIALS SCIENCE
METALS
MOBILITY
MULTI-PHOTON PROCESSES
OXIDES
OXYGEN COMPOUNDS
PHOTONS
RADIATIONS
SCAVENGING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ULTRAVIOLET RADIATION
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Summary:We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to ∼1018 cm−3 from the background level of 1016 cm−3, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at ∼108 and field-effect mobility at 22.7 cm2/V s.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3429586