Structural and optical properties of Mn-doped CdS thin films prepared by ion implantation

We report on structural and optical properties of Mn-doped CdS thin films prepared by 190 keV Mn-ion implantation at different temperatures. Mn-ion implantation in the fluence range of 1 × 10 13 - 1 × 10 16   ions cm − 2 does not lead to the formation of any secondary phase. However, it induces stru...

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Bibliographic Details
Published in:Journal of applied physics 2009-06, Vol.105 (12), p.123507-123507-4
Main Authors: Chandramohan, S., Kanjilal, A., Tripathi, J. K., Sarangi, S. N., Sathyamoorthy, R., Som, T.
Format: Article
Language:English
Subjects:
CADMIUM COMPOUNDS
CADMIUM SULFIDES
CHALCOGENIDES
CHARGED PARTICLES
DOPED MATERIALS
ELEMENTS
EMISSION
ENERGY GAP
INORGANIC PHOSPHORS
ION IMPLANTATION
IONS
LUMINESCENCE
MANGANESE
MANGANESE IONS
MATERIALS
MATERIALS SCIENCE
METALS
OPTICAL PROPERTIES
PHOSPHORS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SULFIDES
SULFUR COMPOUNDS
THIN FILMS
TRANSITION ELEMENTS
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Summary:We report on structural and optical properties of Mn-doped CdS thin films prepared by 190 keV Mn-ion implantation at different temperatures. Mn-ion implantation in the fluence range of 1 × 10 13 - 1 × 10 16   ions cm − 2 does not lead to the formation of any secondary phase. However, it induces structural disorder, causing a decrease in the optical band gap. This is addressed on the basis of band tailing due to creation of localized energy states and Urbach energy calculations. Mn-doped samples exhibit a new band in their photoluminescence spectra at 2.22 eV, which originates from the d - d ( T 4 1 → A 6 1 ) transition of tetrahedrally coordinated Mn 2 + ions.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3151712