Diffusion mechanism and the thermal stability of fluorine ions in GaN after ion implantation

The diffusion mechanisms of fluorine ions in GaN are investigated by means of time-of-flight secondary ion mass spectrometry. Instead of incorporating fluorine ions close to the sample surface by fluorine plasma treatment, fluorine ion implantation with an energy of 180 keV is utilized to implant fl...

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Bibliographic Details
Published in:Journal of applied physics 2009-04, Vol.105 (8), p.083519-083519-4
Main Authors: Wang, M. J., Yuan, L., Chen, K. J., Xu, F. J., Shen, B.
Format: Article
Language:English
Subjects:
ANNEALING
CALCULATION METHODS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DATA ANALYSIS
ENERGY RANGE
FLUORINE IONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MASS SPECTRA
MASS SPECTROSCOPY
MATERIALS
MATERIALS SCIENCE
MOLECULAR DYNAMICS METHOD
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
POINT DEFECTS
SEMICONDUCTOR MATERIALS
SIMULATION
SPECTRA
SPECTROSCOPY
TIME-OF-FLIGHT METHOD
VACANCIES
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Summary:The diffusion mechanisms of fluorine ions in GaN are investigated by means of time-of-flight secondary ion mass spectrometry. Instead of incorporating fluorine ions close to the sample surface by fluorine plasma treatment, fluorine ion implantation with an energy of 180 keV is utilized to implant fluorine ions deep into the GaN bulk, preventing the surface effects from affecting the data analysis. It is found that the diffusion of fluorine ions in GaN is a dynamic process featuring an initial out-diffusion followed by in- diffusion and the final stabilization. A vacancy-assisted diffusion model is proposed to account for the experimental observations, which is also consistent with results on molecular dynamic simulation. Fluorine ions tend to occupy Ga vacancies induced by ion implantation and diffuse to vacancy rich regions. The number of continuous vacancy chains can be significantly reduced by a dynamic thermal annealing process. As a result, strong local confinement and stabilization of fluorine ions can be obtained in GaN crystal, suggesting excellent thermal stability of fluorine ions for device applications.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3106561