Interstitial-mediated diffusion in germanium under proton irradiation

We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B...

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Bibliographic Details
Published in:Physical review letters 2009-12, Vol.103 (25), p.255501-255501, Article 255501
Main Authors: Bracht, H, Schneider, S, Klug, J N, Liao, C Y, Lundsgaard Hansen, J, Haller, E E, Nylandsted Larsen, A, Bougeard, D, Posselt, M, Wündisch, C
Format: Article
Language:English
Subjects:
BARYONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEACTIVATION
DIFFUSION
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
GERMANIUM
GERMANIUM ISOTOPES
HADRONS
INTERSTITIALS
ISOTOPES
MATERIALS SCIENCE
METALS
MEV RANGE
MEV RANGE 01-10
NUCLEONS
POINT DEFECTS
PROTONS
SELF-DIFFUSION
VACANCIES
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Summary:We report experiments on the impact of 2.5 MeV proton irradiation on self-diffusion and dopant diffusion in germanium (Ge). Self-diffusion under irradiation reveals an unusual depth independent broadening of the Ge isotope multilayer structure. This behavior and the observed enhanced diffusion of B and retarded diffusion of P demonstrates that an interstitial-mediated diffusion process dominates in Ge under irradiation. This fundamental finding opens up unique ways to suppress vacancy-mediated diffusion in Ge and to solve the donor deactivation problem that hinders the fabrication of Ge-based nanoelectronic devices.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.103.255501