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Dielectric properties of some MM'O{sub 4} and MTiM'O{sub 6} (M=Cr, Fe, Ga; M'=Nb, Ta, Sb) rutile-type oxides

We describe an investigation of the structure and dielectric properties of MM'O{sub 4} and MTiM'O{sub 6} rutile-type oxides for M=Cr, Fe, Ga and M'=Nb, Ta and Sb. All the oxides adopt a disordered rutile structure (P4{sub 2}/mnm) at ambient temperature. A partial ordered trirutile-typ...

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Bibliographic Details
Published in:Journal of solid state chemistry 2010-06, Vol.183 (6)
Main Authors: Mani, Rohini, Achary, S.N., Chakraborty, Keka R., Deshpande, S.K., Joy, Joby E., Nag, Abanti, Gopalakrishnan, J., Tyagi, A.K.
Format: Article
Language:English
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Summary:We describe an investigation of the structure and dielectric properties of MM'O{sub 4} and MTiM'O{sub 6} rutile-type oxides for M=Cr, Fe, Ga and M'=Nb, Ta and Sb. All the oxides adopt a disordered rutile structure (P4{sub 2}/mnm) at ambient temperature. A partial ordered trirutile-type structure is confirmed for FeTaO{sub 4} from the low temperature (17 K) neutron diffraction studies. While both the MM'O{sub 4} oxides (CrTaO{sub 4} and FeTaO{sub 4}) investigated show a normal dielectric property MTiM'O{sub 6} oxides for M=Fe, Cr and M'=Nb/Ta/Sb display a distinct relaxor/relaxor-like response. Significantly the corresponding gallium analogs, GaTiNbO{sub 6} and GaTiTaO{sub 6}, do not show a relaxor response at T
ISSN:0022-4596
1095-726X
DOI:10.1016/j.jssc.2010.04.022