Electrical Characteristics and Interface Properties of III Nitride-Based Metal-Insulator-Semiconductor Structure

In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high...

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Bibliographic Details
Main Authors: Mahyuddin, A., Hassan, Z., Yusof, Y., Cheong, K. Y.
Format: Conference Proceeding
Language:English
Subjects:
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
BEAMS
CAPACITANCE
CHALCOGENIDES
CHARGE DENSITY
COHERENT SCATTERING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
DENSITY
DIFFRACTION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INTERFACES
LAYERS
MATERIALS
METALS
MIS SOLAR CELLS
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA
PNICTIDES
RESOLUTION
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES
X-RAY DIFFRACTION
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Description
Summary:In this work, III-Nitride based metal-insulator-semiconductor (MIS) structure has been studied using AlN/GaN heterostructures on Si (111) with AlN buffer layer grown by plasma-assisted molecular beam epitaxy (MBE). The structural and electrical characteristics of the films were studied through high resolution x-ray diffraction (HRXRD), capacitance-voltage (C-V) and current-voltage (I-V) measurements. The value of flat-band voltage was -0.7 V. A total fixed oxide charge density of 2.73x10{sup 11} cm{sup -2} was estimated. Terman's method was used to obtain the density of interface state in the MIS structure. The analysis showed low interface state density values of 3.66x10{sup 11} cm{sup -2} eV{sup -1}.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3469610