Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E{sub e} = 40 - 70 keV...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 1998-04, Vol.28 (4), p.294-296
Main Authors: Kozlovskii, Vladimir I, Trubenko, P A, Dianov, Evgenii M, Korostelin, Yurii V, Skasyrsky, Yan K, Shapkin, P V
Format: Article
Language:English
Subjects:
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
CURRENT DENSITY
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PUMPING
ELECTRON BEAM PUMPING
ELECTRON SCANNING
ENERGY RANGE
EPITAXY
KEV RANGE
LASERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PUMPING
QUANTUM WELLS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT
WAVELENGTHS
ZINC COMPOUNDS
ZINC SELENIDES
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Summary:The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E{sub e} = 40 - 70 keV energy. At T = 80 K for E{sub e} = 65 keV the threshold current density was 60 A cm{sup -2} and the output power was 0.15 W at the 465 nm wavelength. At T= 300 K the lasing ({lambda}= 474 nm) occurred in the ZnSe substrate. (lasers)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE1998v028n04ABEH001226