Formation of epitaxial metastable NiGe{sub 2} thin film on Ge(100) by pulsed excimer laser anneal

Epitaxial nickel digermanide (NiGe{sub 2}), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe{sub 2} formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscatte...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (18)
Main Authors: Lim, Phyllis S. Y., Yeo, Yee-Chia, Chi, Dong Zhi, Lim, Poh Chong, Wang, Xin Cai, Chan, Taw Kuei, Osipowicz, Thomas
Format: Article
Language:English
Subjects:
ALLOYS
ANNEALING
COHERENT SCATTERING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
ENERGY BEAM DEPOSITION
EPITAXY
EXCIMER LASERS
FREE ENERGY
GAS LASERS
GERMANIUM
HEAT TREATMENTS
INTERFACES
INTERMETALLIC COMPOUNDS
IRRADIATION
LASER RADIATION
LASERS
MATERIALS
MATERIALS SCIENCE
METALS
MICROSCOPY
NICKEL
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PULSED IRRADIATION
RADIATIONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACE COATING
SURFACE ENERGY
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
THIN FILMS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
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Description
Summary:Epitaxial nickel digermanide (NiGe{sub 2}), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe{sub 2} formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and first-principles calculations. The formation mechanism of NiGe{sub 2} is discussed and is attributed to both the reduced interfacial energy at the NiGe{sub 2}/Ge(100) interface and the kinetic aspects of the laser annealing reaction associated with phase transformation and film agglomeration.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3514242