Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap

The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is...

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Bibliographic Details
Published in:Applied physics letters 2010-11, Vol.97 (19), p.191902-191902-3
Main Authors: Moseley, Michael, Lowder, Jonathan, Billingsley, Daniel, Doolittle, W. Alan
Format: Article
Language:English
Subjects:
ADSORPTION
COHERENT SCATTERING
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM
INDIUM COMPOUNDS
KINETICS
LAYERS
MATERIALS
MATERIALS SCIENCE
METALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
REFLECTION
SCATTERING
SEGREGATION
SEMICONDUCTOR MATERIALS
SOLUBILITY
SORPTION
SURFACES
TRANSIENTS
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Summary:The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3509416