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Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is...
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| Published in: | Applied physics letters 2010-11, Vol.97 (19), p.191902-191902-3 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c378t-ee458b9f55684792648d53b8f07dae0809233d7876e0973b2d814ff0cee163f43 |
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| cites | cdi_FETCH-LOGICAL-c378t-ee458b9f55684792648d53b8f07dae0809233d7876e0973b2d814ff0cee163f43 |
| container_end_page | 191902-3 |
| container_issue | 19 |
| container_start_page | 191902 |
| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Moseley, Michael Lowder, Jonathan Billingsley, Daniel Doolittle, W. Alan |
| description | The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation
in situ
is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown. |
| doi_str_mv | 10.1063/1.3509416 |
| format | article |
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in situ
is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3509416</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>ADSORPTION ; COHERENT SCATTERING ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; CRYSTAL GROWTH ; CRYSTAL GROWTH METHODS ; DIFFRACTION ; ELECTRON DIFFRACTION ; ELEMENTS ; EPITAXY ; GALLIUM COMPOUNDS ; GALLIUM NITRIDES ; INDIUM ; INDIUM COMPOUNDS ; KINETICS ; LAYERS ; MATERIALS ; MATERIALS SCIENCE ; METALS ; MOLECULAR BEAM EPITAXY ; NITRIDES ; NITROGEN COMPOUNDS ; PNICTIDES ; REFLECTION ; SCATTERING ; SEGREGATION ; SEMICONDUCTOR MATERIALS ; SOLUBILITY ; SORPTION ; SURFACES ; TRANSIENTS</subject><ispartof>Applied physics letters, 2010-11, Vol.97 (19), p.191902-191902-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c378t-ee458b9f55684792648d53b8f07dae0809233d7876e0973b2d814ff0cee163f43</citedby><cites>FETCH-LOGICAL-c378t-ee458b9f55684792648d53b8f07dae0809233d7876e0973b2d814ff0cee163f43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3509416$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,782,784,795,885,27924,27925,76255</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/21464555$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Moseley, Michael</creatorcontrib><creatorcontrib>Lowder, Jonathan</creatorcontrib><creatorcontrib>Billingsley, Daniel</creatorcontrib><creatorcontrib>Doolittle, W. Alan</creatorcontrib><title>Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap</title><title>Applied physics letters</title><description>The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation
in situ
is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.</description><subject>ADSORPTION</subject><subject>COHERENT SCATTERING</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL GROWTH</subject><subject>CRYSTAL GROWTH METHODS</subject><subject>DIFFRACTION</subject><subject>ELECTRON DIFFRACTION</subject><subject>ELEMENTS</subject><subject>EPITAXY</subject><subject>GALLIUM COMPOUNDS</subject><subject>GALLIUM NITRIDES</subject><subject>INDIUM</subject><subject>INDIUM COMPOUNDS</subject><subject>KINETICS</subject><subject>LAYERS</subject><subject>MATERIALS</subject><subject>MATERIALS SCIENCE</subject><subject>METALS</subject><subject>MOLECULAR BEAM EPITAXY</subject><subject>NITRIDES</subject><subject>NITROGEN COMPOUNDS</subject><subject>PNICTIDES</subject><subject>REFLECTION</subject><subject>SCATTERING</subject><subject>SEGREGATION</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SOLUBILITY</subject><subject>SORPTION</subject><subject>SURFACES</subject><subject>TRANSIENTS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kM9LwzAYhoMoOKcH_4OAJw-dSdP86EWQoXMw9KLnkKZJG12bkaTI_nszt6unjw-e9-XlAeAWowVGjDzgBaGorjA7AzOMOC8IxuIczBBCpGA1xZfgKsav_NKSkBkYln5MwW-htzBOwSptoGpV8gP8dqNJTkdofYCpN7AL_if1B7J3XV-4sXXTAHUuMGOC63Gl3jIX_NT1fkp_kcFF7Rq3dWkPO7W7BhdWbaO5Od05-Hx5_li-Fpv31Xr5tCk04SIVxlRUNLWllImK1yWrREtJIyzirTJIoDpvb7ngzKCak6ZsBa6sRdoYzIityBzcHXt9TE7mCcnoPg8djU6yxBWrKKWZuj9SOvgYg7FyF9ygwl5iJA82JZYnm5l9PLKHMpWcH_-HT0qlt_KkVCryC19xfKY</recordid><startdate>20101108</startdate><enddate>20101108</enddate><creator>Moseley, Michael</creator><creator>Lowder, Jonathan</creator><creator>Billingsley, Daniel</creator><creator>Doolittle, W. Alan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20101108</creationdate><title>Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap</title><author>Moseley, Michael ; Lowder, Jonathan ; Billingsley, Daniel ; Doolittle, W. Alan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-ee458b9f55684792648d53b8f07dae0809233d7876e0973b2d814ff0cee163f43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ADSORPTION</topic><topic>COHERENT SCATTERING</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL GROWTH</topic><topic>CRYSTAL GROWTH METHODS</topic><topic>DIFFRACTION</topic><topic>ELECTRON DIFFRACTION</topic><topic>ELEMENTS</topic><topic>EPITAXY</topic><topic>GALLIUM COMPOUNDS</topic><topic>GALLIUM NITRIDES</topic><topic>INDIUM</topic><topic>INDIUM COMPOUNDS</topic><topic>KINETICS</topic><topic>LAYERS</topic><topic>MATERIALS</topic><topic>MATERIALS SCIENCE</topic><topic>METALS</topic><topic>MOLECULAR BEAM EPITAXY</topic><topic>NITRIDES</topic><topic>NITROGEN COMPOUNDS</topic><topic>PNICTIDES</topic><topic>REFLECTION</topic><topic>SCATTERING</topic><topic>SEGREGATION</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOLUBILITY</topic><topic>SORPTION</topic><topic>SURFACES</topic><topic>TRANSIENTS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moseley, Michael</creatorcontrib><creatorcontrib>Lowder, Jonathan</creatorcontrib><creatorcontrib>Billingsley, Daniel</creatorcontrib><creatorcontrib>Doolittle, W. Alan</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moseley, Michael</au><au>Lowder, Jonathan</au><au>Billingsley, Daniel</au><au>Doolittle, W. Alan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap</atitle><jtitle>Applied physics letters</jtitle><date>2010-11-08</date><risdate>2010</risdate><volume>97</volume><issue>19</issue><spage>191902</spage><epage>191902-3</epage><pages>191902-191902-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation
in situ
is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3509416</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-11, Vol.97 (19), p.191902-191902-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21464555 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建） |
| subjects | ADSORPTION COHERENT SCATTERING CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL GROWTH CRYSTAL GROWTH METHODS DIFFRACTION ELECTRON DIFFRACTION ELEMENTS EPITAXY GALLIUM COMPOUNDS GALLIUM NITRIDES INDIUM INDIUM COMPOUNDS KINETICS LAYERS MATERIALS MATERIALS SCIENCE METALS MOLECULAR BEAM EPITAXY NITRIDES NITROGEN COMPOUNDS PNICTIDES REFLECTION SCATTERING SEGREGATION SEMICONDUCTOR MATERIALS SOLUBILITY SORPTION SURFACES TRANSIENTS |
| title | Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap |
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