The disordering effect of Ti observed in the microstructure and electrical properties of W{sub 0.95}Ti{sub 0.05}O{sub 3} thin films

We report on the inhibition of WO{sub 3} crystallization by the addition of Ti observed in sputter-deposited W{sub 0.95}Ti{sub 0.05}O{sub 3} films. The effect of growth-temperature on the crystallization indicates that the W{sub 0.95}Ti{sub 0.05}O{sub 3} films grown at temperatures =}300 deg. C. The...

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Bibliographic Details
Published in:Applied physics letters 2010-10, Vol.97 (14)
Main Authors: Kalidindi, N. R., Bharathi, K. Kamala, Ramana, C. V.
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALLIZATION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
MATERIALS
MATERIALS SCIENCE
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN OXIDES
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Summary:We report on the inhibition of WO{sub 3} crystallization by the addition of Ti observed in sputter-deposited W{sub 0.95}Ti{sub 0.05}O{sub 3} films. The effect of growth-temperature on the crystallization indicates that the W{sub 0.95}Ti{sub 0.05}O{sub 3} films grown at temperatures =}300 deg. C. The corresponding electrical properties exhibit a clear distinction as a function of these structural transformations. Temperature-dependent dc electrical conductivity (80-300 K) shows the semiconducting nature of W{sub 0.95}Ti{sub 0.05}O{sub 3} films and exhibits two distinct regions indicative of two different types of transport mechanisms.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3496473