Laser deposition of ZnO films on silicon and sapphire substrates

Laser deposition of zinc oxide films is studied. An intermediate screen is used to prevent microparticles formed during laser ablation of the target from falling on the film. The effect of deposition conditions on the morphology of the film, its electrical properties and crystal structure is studied...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2003-11, Vol.33 (11), p.975-980
Main Authors: Zherikhin, A N, Khudobenko, A I, Williams, R T, Wilkinson, J, User, K B, Xiong, Gang, Voronov, Valerii V
Format: Article
Language:English
Subjects:
ABLATION
CHALCOGENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORUNDUM
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
LASER RADIATION
LUMINESCENCE
MATERIALS
MINERALS
MORPHOLOGY
N-TYPE CONDUCTORS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
P-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
RADIATIONS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES
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Description
Summary:Laser deposition of zinc oxide films is studied. An intermediate screen is used to prevent microparticles formed during laser ablation of the target from falling on the film. The effect of deposition conditions on the morphology of the film, its electrical properties and crystal structure is studied. It is shown that the laser deposition technique can be used to obtain films of both types. The resistivity of the films was 0.07 {Omega} cm for films with the n-type conduction and 0.08 {Omega} cm for films with the p-type conduction. The photoluminescence studies of the films have shown that stimulated radiation is generated in the films under pump intensity exceeding 6 MW cm{sup -2}. (interaction of laser radiation with matter. laser plasma)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2003v033n11ABEH002533