Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment

Single-walled carbon nanotube field-effect transistors (CNT-FETs) were characterized before and after gamma radiation treatment using noise spectroscopy. The results obtained demonstrate that in long channel CNT-FETs with a length of 10   μ m the contribution of contact regions can be neglected. Mor...

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Bibliographic Details
Published in:Journal of applied physics 2010-03, Vol.107 (6), p.063701-063701-6
Main Authors: Vitusevich, S. A., Sydoruk, V. A., Petrychuk, M. V., Danilchenko, B. A., Klein, N., Offenhäusser, A., Ural, A., Bosman, G.
Format: Article
Language:English
Subjects:
CARBON
DOSES
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FIELD EFFECT TRANSISTORS
GAMMA RADIATION
IONIZING RADIATIONS
MATERIALS
MATERIALS SCIENCE
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
NANOTUBES
NOISE
NONMETALS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRANSISTORS
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Description
Summary:Single-walled carbon nanotube field-effect transistors (CNT-FETs) were characterized before and after gamma radiation treatment using noise spectroscopy. The results obtained demonstrate that in long channel CNT-FETs with a length of 10   μ m the contribution of contact regions can be neglected. Moreover, radiation treatment with doses of 1 × 10 6 and 2 × 10 6   rad allows a considerable decrease parallel to the nanotube parasitic conductivity and even the shift region with maximal conductivity to the voltage range of nearly zero gate voltage that improves the working point of the FETs. The Hooge parameters obtained before and after gamma radiation treatment with a dose of 1 × 10 6   rad are found to be about 5 × 10 − 3 . The parameters are comparable with typical values for conventional semiconductors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3340977