Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon-germanium nanowires

Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-eleme...

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Bibliographic Details
Published in:Journal of applied physics 2010-07, Vol.108 (2), p.024312-024312-5
Main Authors: Chin, Hock-Chun, Gong, Xiao, Ng, Tien Khee, Loke, Wan Khai, Wong, Choun Pei, Shen, Zexiang, Wicaksono, Satrio, Yoon, Soon Fatt, Yeo, Yee-Chia
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
CALCULATION METHODS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
EPITAXY
FINITE ELEMENT METHOD
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HETEROJUNCTIONS
LAYERS
MATERIALS
MATERIALS SCIENCE
MATHEMATICAL SOLUTIONS
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
NUMERICAL SOLUTION
PNICTIDES
QUANTUM WIRES
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY
STRAINS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
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Description
Summary:Heterogeneous integration of high-quality GaAs on Si-based substrates using a selective migration-enhanced epitaxy (MEE) of GaAs on strain-compliant SiGe nanowires was demonstrated for the first time. The physics of compliance in nanoscale heterostructures was captured and studied using finite-element simulation. It is shown that nanostructures can provide additional substrate compliance for strain relief and therefore contribute to the formation of defect-free GaAs on SiGe. Extensive characterization using scanning electron microscopy and cross-sectional transmission electron microscopy was performed to illustrate the successful growth of GaAs on SiGe nanowire. Raman and Auger electron spectroscopy measurements further confirmed the quality of the GaAs grown and the high growth selectivity of the MEE process.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3465327