Polarization Raman spectroscopy of GaN nanorod bundles

We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Ram...

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Bibliographic Details
Published in:Journal of applied physics 2010-08, Vol.108 (3), p.033504-033504-6
Main Authors: Tite, T., Lee, C. J., Chang, Y.-M.
Format: Article
Language:English
Subjects:
CORRELATIONS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
GALLIUM NITRIDES
LASER SPECTROSCOPY
MATERIALS
MATERIALS SCIENCE
MICROSCOPY
MOLECULAR BEAM EPITAXY
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
ORIENTATION
PLASMA
PNICTIDES
POLARIZATION
PROCESSING
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RELAXATION
SELECTION RULES
SEMICONDUCTOR MATERIALS
SPECTRA
SPECTROSCOPY
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
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Description
Summary:We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3460811