Ultra-thin surface modification with nitrogen gas cluster ion beams

Cluster size effects of N{sub 2}-GCIB on Si substrates were studied. After GCIB irradiations, two layers (amorphous Si and transition layer (partially modified crystalline Si)) were formed. The thickness of the amorphous Si layer and transition layer became thin in the case of N{sub 2}-GCIB irradiat...

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Bibliographic Details
Main Authors: Toyoda, Noriaki, Mashita, Takafumi, Yamada, Isao
Format: Conference Proceeding
Language:English
Subjects:
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
ATOMS
BEAMS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIMENSIONS
ELECTRON MICROSCOPY
ELEMENTS
ION BEAMS
ION PAIRS
IONIZATION
IRRADIATION
LAYERS
MICROSCOPY
MODIFICATIONS
NITROGEN
NONMETALS
PATTERN RECOGNITION
SUBSTRATES
SURFACES
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
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Description
Summary:Cluster size effects of N{sub 2}-GCIB on Si substrates were studied. After GCIB irradiations, two layers (amorphous Si and transition layer (partially modified crystalline Si)) were formed. The thickness of the amorphous Si layer and transition layer became thin in the case of N{sub 2}-GCIB irradiations at the same energy/atom or energy/molecule. With increasing the N{sub 2}-GCIB cluster size, the modified layer thickness became much thinner ({approx}2 nm). Thus, ultra-thin surface modification is achieved with N{sub 2}-GCIB without inducing thick transition layer.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3548382