Physical Ion Sputtering At Glancing Angles As A Novel IC De-processing Technique

Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical e...

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Bibliographic Details
Main Authors: Vyatkin, A. F., Zinenko, V. I.
Format: Conference Proceeding
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
BEAMS
CHARGED PARTICLES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
ETCHING
FAILURES
INCIDENCE ANGLE
INTEGRATED CIRCUITS
ION BEAMS
IONS
LAYERS
MATERIALS SCIENCE
MECHANICAL POLISHING
MICROELECTRONIC CIRCUITS
MICROSCOPY
PLASMA
POLISHING
PROCESSING
SCANNING ELECTRON MICROSCOPY
SPUTTERING
SURFACE FINISHING
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Summary:Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical etching, reactive ion etching, plasma etching and chemical mechanical polishing or a combination of these techniques are traditionally used for de-processing of IC. In this work a novel technique which is physical ion sputtering at glancing incidence angles allowing precise information about possible reasons of IC failures occurring at different steps of IC processing is proposed.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3548409