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Physical Ion Sputtering At Glancing Angles As A Novel IC De-processing Technique
Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical e...
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creator | Vyatkin, A. F. Zinenko, V. I. |
description | Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical etching, reactive ion etching, plasma etching and chemical mechanical polishing or a combination of these techniques are traditionally used for de-processing of IC. In this work a novel technique which is physical ion sputtering at glancing incidence angles allowing precise information about possible reasons of IC failures occurring at different steps of IC processing is proposed. |
doi_str_mv | 10.1063/1.3548409 |
format | conference_proceeding |
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F. ; Zinenko, V. I.</creator><creatorcontrib>Vyatkin, A. F. ; Zinenko, V. I.</creatorcontrib><description>Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical etching, reactive ion etching, plasma etching and chemical mechanical polishing or a combination of these techniques are traditionally used for de-processing of IC. 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F.</creatorcontrib><creatorcontrib>Zinenko, V. I.</creatorcontrib><title>Physical Ion Sputtering At Glancing Angles As A Novel IC De-processing Technique</title><title>AIP conference proceedings</title><description>Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical etching, reactive ion etching, plasma etching and chemical mechanical polishing or a combination of these techniques are traditionally used for de-processing of IC. In this work a novel technique which is physical ion sputtering at glancing incidence angles allowing precise information about possible reasons of IC failures occurring at different steps of IC processing is proposed.</description><subject>ATOMIC FORCE MICROSCOPY</subject><subject>BEAMS</subject><subject>CHARGED PARTICLES</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRYSTAL DEFECTS</subject><subject>CRYSTAL STRUCTURE</subject><subject>ELECTRON MICROSCOPY</subject><subject>ELECTRONIC CIRCUITS</subject><subject>ETCHING</subject><subject>FAILURES</subject><subject>INCIDENCE ANGLE</subject><subject>INTEGRATED CIRCUITS</subject><subject>ION BEAMS</subject><subject>IONS</subject><subject>LAYERS</subject><subject>MATERIALS SCIENCE</subject><subject>MECHANICAL POLISHING</subject><subject>MICROELECTRONIC CIRCUITS</subject><subject>MICROSCOPY</subject><subject>PLASMA</subject><subject>POLISHING</subject><subject>PROCESSING</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SPUTTERING</subject><subject>SURFACE FINISHING</subject><issn>0094-243X</issn><issn>1551-7616</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNotjltLAzEUhIMouFYf_AcBn1NzctlsHsuqtVC0YAXfSjZ7tl1Zktqkgv_e9QIDMzAfwxByDXwKvJS3MJVaVYrbE1KA1sBMCeUpKTi3igkl387JRUrvnAtrTFWQ1Wr3lXrvBrqIgb7sjznjoQ9bOst0Prjgf3PYDpjobBR9ip84wjW9Q7Y_RI8p_SBr9LvQfxzxkpx1bkh49e8T8vpwv64f2fJ5vqhnSxYFlJk5LSovralaVLotpbQAlreqKY13WqGUONa2U45XrRPadcahrhqvBXJsUE7Izd9uTLnfJN_n8YGPIaDPGwEaOADIbwu0Tr0</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Vyatkin, A. F.</creator><creator>Zinenko, V. I.</creator><scope>OTOTI</scope></search><sort><creationdate>20100101</creationdate><title>Physical Ion Sputtering At Glancing Angles As A Novel IC De-processing Technique</title><author>Vyatkin, A. F. ; Zinenko, V. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o216t-a528c3978de45d63391190d4b67ca54e33ec399f4a08da25af7ae58bc52e0ebe3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ATOMIC FORCE MICROSCOPY</topic><topic>BEAMS</topic><topic>CHARGED PARTICLES</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRYSTAL DEFECTS</topic><topic>CRYSTAL STRUCTURE</topic><topic>ELECTRON MICROSCOPY</topic><topic>ELECTRONIC CIRCUITS</topic><topic>ETCHING</topic><topic>FAILURES</topic><topic>INCIDENCE ANGLE</topic><topic>INTEGRATED CIRCUITS</topic><topic>ION BEAMS</topic><topic>IONS</topic><topic>LAYERS</topic><topic>MATERIALS SCIENCE</topic><topic>MECHANICAL POLISHING</topic><topic>MICROELECTRONIC CIRCUITS</topic><topic>MICROSCOPY</topic><topic>PLASMA</topic><topic>POLISHING</topic><topic>PROCESSING</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SPUTTERING</topic><topic>SURFACE FINISHING</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vyatkin, A. F.</creatorcontrib><creatorcontrib>Zinenko, V. I.</creatorcontrib><collection>OSTI.GOV</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vyatkin, A. F.</au><au>Zinenko, V. I.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Physical Ion Sputtering At Glancing Angles As A Novel IC De-processing Technique</atitle><btitle>AIP conference proceedings</btitle><date>2010-01-01</date><risdate>2010</risdate><volume>1321</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><abstract>Failure analysis (de-processing) techniques are becoming more and more important in tackling integrated circuits (IC) process-related problems. Particularly, failure analysis of ICs requires opening and de-layering a chip in a layer by layer mode in order to find hidden defects. Selective chemical etching, reactive ion etching, plasma etching and chemical mechanical polishing or a combination of these techniques are traditionally used for de-processing of IC. In this work a novel technique which is physical ion sputtering at glancing incidence angles allowing precise information about possible reasons of IC failures occurring at different steps of IC processing is proposed.</abstract><cop>United States</cop><doi>10.1063/1.3548409</doi></addata></record> |
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source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | ATOMIC FORCE MICROSCOPY BEAMS CHARGED PARTICLES CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRYSTAL DEFECTS CRYSTAL STRUCTURE ELECTRON MICROSCOPY ELECTRONIC CIRCUITS ETCHING FAILURES INCIDENCE ANGLE INTEGRATED CIRCUITS ION BEAMS IONS LAYERS MATERIALS SCIENCE MECHANICAL POLISHING MICROELECTRONIC CIRCUITS MICROSCOPY PLASMA POLISHING PROCESSING SCANNING ELECTRON MICROSCOPY SPUTTERING SURFACE FINISHING |
title | Physical Ion Sputtering At Glancing Angles As A Novel IC De-processing Technique |
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