Nissin Ion Doping System--H{sub 2}{sup +} Implantation for Silicon Layer Exfoliation

A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x...

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Bibliographic Details
Published in:AIP conference proceedings 2011-01, Vol.1321 (1)
Main Authors: Cherekdjian, S., Maschmeyer, R. O., Cites, J., Tatemichi, J., Inouchi, Y., Onoda, M., Orihira, K., Matsumoto, T., Konishi, M., Naito, M.
Format: Article
Language:English
Subjects:
ACCIDENTS
BEAM OPTICS
BEAMS
CHARGED PARTICLES
CHEMICAL REACTIONS
ELEMENTS
EXCURSIONS
GLASS
HYDROGEN IONS
IMPLANTS
ION BEAMS
ION IMPLANTATION
IONS
LAYERS
MATERIALS SCIENCE
MOLECULAR IONS
PARTICLE ACCELERATORS
PROCESSING
REACTOR ACCIDENTS
REDUCTION
SEMIMETALS
SILICON
SUBSTRATES
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Summary:A Nissin iG4 ion doping system (termed iG4) utilizes broad beam technology to implant GEN 4 sheets of glass for LCD production. The mechanical scanned end-station with robotic handling for GEN 4 glass substrates was redesigned, and a new end-station was built to handle rectangular silicon tiles (23x18 cm). A three sub-system modular risk reduction process was used to test production solutions, and maximize the success of transferring the R and D implant recipes developed on a standard focused beam ion implanter to the Nissin broad beam iG4 solution. The silicon tile end-station including the implant scanning system was tested for reliability and durability. The end-station handled rectangular silicon tiles reliably without detrimental edge chipping or silicon breakage. The ion optics was demonstrated to successfully provide stable hydrogen ions for the Corning registered silicon on glass layer transfer process. This layer transfer process is very susceptible and sensitive to the implant processing temperature. The temperature excursions during implant processing for the iG4 exfoliation process were found to be in line with the R and D focused ion beam system. This data confirmed the system production-readiness in providing an efficient solution for the high volume production of hydrogen implanted silicon rectangular tiles.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.3548430