In-Situ RBS Channelling Studies Of Ion Implanted Semiconductors And Insulators

• Main Author: Wendler, E.
• Format: Conference Proceeding
• Language: English
• Subjects: ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; ARGON IONS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CHALCOGENIDES; CHANNELING; CHARGED PARTICLES; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CROSS SECTIONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; DISTRIBUTION; GALLIUM COMPOUNDS; GALLIUM NITRIDES; ION BEAMS; ION IMPLANTATION; IONS; LATTICE VIBRATIONS; LINE DEFECTS; MATERIALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL RADIATION EFFECTS; PNICTIDES; RADIATION EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; SPECTRA; SPECTROSCOPY; TEMPERATURE RANGE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; THERMAL ANALYSIS; ZINC COMPOUNDS; ZINC OXIDES
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/1.3586177

The experimental set-up at the ion beam facility in Jena allows the performance of Rutherford backscattering spectrometry (RBS) in channeling configuration at any temperature between 15 K and room temperature without changing the environment or the temperature of the sample. Doing RBS channeling studies at 15 K increases the sensitivity to defects, because the influence of lattice vibrations is reduced. Thus, the very early processes of ion induced damage formation can be studied and the cross section of damage formation per ion in virgin material, P, can be determined. At 15 K ion-beam induced damage formation itself can be investigated, because the occurrence of thermal effects can be widely excluded. In AlAs, GaN, and ZnO the cross section P measured at 15 K can be used to estimate the displacement energy for the heavier component, which is in reasonable agreement with other experiments or theoretical calculations. For a given ion species (here Ar ions) the measured cross section P exhibits a quadratic dependence P{proportional_to}P{sub SRIM}{sup 2} with P{sub SRIM} being the value calculated with SRIM using established displacement energies from other sources. From these results the displacement energy of AlN can be estimated to about 40 eV. Applying the computer code DICADA to calculate the depth distribution of displaced lattice atoms from the channeling spectra, indirect information about the type of defects produced during ion implantation at 15 K can be obtained. In some materials like GaN or ZnO the results indicate the formation of extended defects most probably dislocation loops and thus suggest an athermal mobility of defect at 15 K.