Exploitation of a self-limiting process for reproducible formation of ultrathin Ni{sub 1-x}Pt{sub x} silicide films

This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidati...

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Bibliographic Details
Published in:Applied physics letters 2010-12, Vol.97 (25)
Main Authors: Zhang Zhen, Zhu Yu, Rossnagel, Steve, Murray, Conal, Jordan-Sweet, Jean, Yang, Bin, Gaudet, Simon, Desjardins, Patrick, Kellock, Andrew J., Ozcan, Ahmet, Zhang Shili, Lavoie, Christian, Ecole Polytechnique de Montreal, Montreal, Quebec H3C 3A7
Format: Article
Language:English
Subjects:
ALLOYS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALLOGRAPHY
DEPOSITION
DIMENSIONS
DIRECT REACTIONS
ELEMENTS
MATERIALS SCIENCE
METALS
NICKEL ALLOYS
NICKEL COMPOUNDS
NUCLEAR REACTIONS
PLATINUM ALLOYS
PLATINUM COMPOUNDS
PLATINUM METAL ALLOYS
SILICIDES
SILICON ALLOYS
SILICON COMPOUNDS
SPUTTERING
STABILITY
STRIPPING
SUBSTRATES
SURFACES
THICKNESS
THIN FILMS
TRANSFER REACTIONS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPOUNDS
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Summary:This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3529459