Cu penetration into low-k dielectric during deposition and bias-temperature stress
Cu penetration into low-k dielectrics can cause serious reliability issues in on-chip interconnect systems. Using secondary ion mass spectrometry with both front-side and back-side depth profiling strategies, Cu was found to diffuse into SiCOH low-k dielectric in a Cu/SiCOH/Si capacitor during Cu de...
Saved in:
Published in: | Applied physics letters 2010-12, Vol.97 (25) |
---|---|
Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Cu penetration into low-k dielectrics can cause serious reliability issues in on-chip interconnect systems. Using secondary ion mass spectrometry with both front-side and back-side depth profiling strategies, Cu was found to diffuse into SiCOH low-k dielectric in a Cu/SiCOH/Si capacitor during Cu deposition. After bias-temperature stressing the capacitor at 270 °C and 2.5 MV/cm, Cu penetrates further into SiCOH, but its distribution profile is the same as that after the same temperature annealing without electrical bias, suggesting no Cu ion drift. The implication of these findings on the Cu/low-k dielectric time-dependent dielectric breakdown modeling is discussed. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3529492 |