Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination

We have developed a straightforward plasma-based method which yields chlorine-terminated n-type 6H-SiC surfaces. Atomic force microscopy shows that the surface roughness is not affected by the plasma processing. Additionally, x-ray photoelectron spectroscopy reveals a significant reduction in oxygen...

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Bibliographic Details
Published in:Applied physics letters 2011-05, Vol.98 (18)
Main Authors: Schoell, S. J., Howgate, J., Hoeb, M., Auernhammer, M., Garrido, J. A., Stutzmann, M., Brandt, M. S., Sharp, I. D.
Format: Article
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
CHLORINE
DIPOLES
ELECTRIC POTENTIAL
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
HALOGENS
MATERIALS
MATERIALS SCIENCE
MICROSCOPY
MULTIPOLES
NONMETALS
OXYGEN
PASSIVATION
PHOTOELECTRON SPECTROSCOPY
PLASMA
POTENTIALS
RADIATIONS
REDUCTION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE POTENTIAL
SURFACE PROPERTIES
SURFACES
ULTRAVIOLET RADIATION
VISIBLE RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:We have developed a straightforward plasma-based method which yields chlorine-terminated n-type 6H-SiC surfaces. Atomic force microscopy shows that the surface roughness is not affected by the plasma processing. Additionally, x-ray photoelectron spectroscopy reveals a significant reduction in oxygen, and a corresponding rise of chlorine core level intensities, following halogen termination. Contact potential difference and surface photovoltage measurements show formation of negative surface dipoles and approximately flat band surface potentials after chlorine termination of (0001) n-type 6H-SiC (built-in voltage Vbi
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3587767