Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015 io...

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Bibliographic Details
Published in:Applied physics letters 2011-06, Vol.98 (24)
Main Authors: Illiberi, A., Kudlacek, P., Smets, A. H. M., Creatore, M., van de Sanden, M. C. M.
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
ARGON IONS
BEAMS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY
INTERFACES
ION BEAMS
IONS
KINETIC ENERGY
MATERIALS
MATERIALS SCIENCE
PASSIVATION
RECOMBINATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SURFACES
THIN FILMS
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Summary:We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7–70 eV), but linearly proportional to the ion flux (6×1014–6×1015 ions cm−2 s−1). This result suggests that the ion flux determines the generation rate of electron–hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron–hole pairs are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3601485