Bulk dislocation core dissociation probed by coherent x rays in silicon

We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dis...

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Bibliographic Details
Published in:Physical review letters 2011-02, Vol.106 (6), p.065502-065502, Article 065502
Main Authors: Jacques, V L R, Ravy, S, Le Bolloc'h, D, Pinsolle, E, Sauvage-Simkin, M, Livet, F
Format: Article
Language:English
Subjects:
Chemical Sciences
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DISLOCATIONS
DISSOCIATION
ELECTROMAGNETIC RADIATION
ELEMENTS
FINE STRUCTURE
IONIZING RADIATIONS
LINE DEFECTS
Material chemistry
MATERIALS SCIENCE
PHASE SHIFT
RADIATIONS
SCATTERING
SEMIMETALS
SILICON
Silicon - chemistry
SURFACES
X RADIATION
X-RAY DIFFRACTION
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Summary:We report on a new approach to probe bulk dislocations by using coherent x-ray diffraction. Coherent x rays are particularly suited for bulk dislocation studies because lattice phase shifts in condensed matter induce typical diffraction patterns which strongly depend on the fine structure of the dislocation cores. The strength of the method is demonstrated by performing coherent diffraction of a single dislocation loop in silicon. A dissociation of a bulk dislocation is measured and proves to be unusually large compared to surface dislocation dissociations. This work opens a route for the study of dislocation cores in the bulk in a static or dynamical regime, and under various external constraints.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.106.065502