Formation of composite InGaN/GaN/InAlN quantum dots

Composite InGaN/GaN/InAlN quantum dots (QDs) have been formed and studied. The structural properties of thin InAlN layers overgrown with GaN have been analyzed, and it is shown that 3D islands with lateral sizes of ∼(20–30) nm are formed in structures of this kind. It is demonstrated that deposition...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-10, Vol.44 (10), p.1338-1341
Main Authors: Tsatsul’nikov, A. F., Zavarin, E. E., Kryzhanovskaya, N. V., Lundin, W. V., Saharov, A. V., Usov, S. O., Brunkov, P. N., Goncharov, V. V., Cherkashin, N. A., Hytch, M.
Format: Article
Language:English
Subjects:
Analysis
DEPOSITION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
ISLANDS
LAYERS
Liquors
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
Physics
Physics and Astronomy
PNICTIDES
QUANTUM DOTS
SURFACES
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Summary:Composite InGaN/GaN/InAlN quantum dots (QDs) have been formed and studied. The structural properties of thin InAlN layers overgrown with GaN have been analyzed, and it is shown that 3D islands with lateral sizes of ∼(20–30) nm are formed in structures of this kind. It is demonstrated that deposition of a thin InGaN layer onto the surface of InAlN islands overgrown with a thin GaN layer leads to transformation of the continuous InGaN layer to an array of isolated QDs with lateral sizes of 20–30 nm and heights of 2–3 nm. The position of these QDs in the growth direction correlates with that of InAlN islands.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610100167