Study of the layer-substrate interface in nc-Si-SiO{sub 2}-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage

Layers grown by magnetron deposition of Si and SiO{sub 2} on a p-type silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the substrate orientation and natural oxidation pre...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-09, Vol.44 (9)
Main Authors: Venger, E. F., Kirillova, S. I., Korsunska, N. E., Stara, T. R., Khomenkova, L. Yu, Sachenko, A. V., Goldstein, Y., Savir, E., Jedrzejewski, J.
Format: Article
Language:English
Subjects:
ANNEALING
CHALCOGENIDES
CHEMICAL REACTIONS
COOLING
DENSITY
DEPOSITION
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
HEAT TREATMENTS
INTERFACES
LAYERS
MAGNETRONS
MATERIALS SCIENCE
MICROWAVE EQUIPMENT
MICROWAVE TUBES
MINERALS
NANOSTRUCTURES
ORIENTATION
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
QUANTUM DOTS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRAPPING
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Summary:Layers grown by magnetron deposition of Si and SiO{sub 2} on a p-type silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the substrate orientation and natural oxidation preceding high-temperature annealing that results in the formation of Si nanocrystals in the SiO{sub 2} matrix on the layer-substrate interface characteristics is studied. The density of fast interface states trapping majority carriers was estimated. It is found that structural changes occur at the layer-substrate interface in the case of a (111) substrate and are caused by stresses appearing upon cooling. It was shown that natural oxidation of the deposited layer, preceding high-temperature annealing, causes an increase in the charge trapped in the oxide.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610090150