Study of the layer-substrate interface in nc-Si-SiO{sub 2}-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2010-09, Vol.44 (9)
• Main Authors: Venger, E. F., Kirillova, S. I., Korsunska, N. E., Stara, T. R., Khomenkova, L. Yu, Sachenko, A. V., Goldstein, Y., Savir, E., Jedrzejewski, J.
• Format: Article
• Language: English
• Subjects: ANNEALING; CHALCOGENIDES; CHEMICAL REACTIONS; COOLING; DENSITY; DEPOSITION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; HEAT TREATMENTS; INTERFACES; LAYERS; MAGNETRONS; MATERIALS SCIENCE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; NANOSTRUCTURES; ORIENTATION; OXIDATION; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUANTUM DOTS; SEMIMETALS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEMPERATURE RANGE 0400-1000 K; TRAPPING
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782610090150

Layers grown by magnetron deposition of Si and SiO{sub 2} on a p-type silicon substrate and containing silicon nanocrystals in the oxide matrix have been studied by the method of temperature dependences of the capacitive photovoltage. The effect of the substrate orientation and natural oxidation preceding high-temperature annealing that results in the formation of Si nanocrystals in the SiO{sub 2} matrix on the layer-substrate interface characteristics is studied. The density of fast interface states trapping majority carriers was estimated. It is found that structural changes occur at the layer-substrate interface in the case of a (111) substrate and are caused by stresses appearing upon cooling. It was shown that natural oxidation of the deposited layer, preceding high-temperature annealing, causes an increase in the charge trapped in the oxide.