A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical proper...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2010-06, Vol.44 (6), p.808-811
Main Authors: Tsatsulnikov, A. F., Lundin, W. V., Sakharov, A. V., Zavarin, E. E., Usov, S. O., Nikolaev, A. E., Kryzhanovskaya, N. V., Synitsin, M. A., Sizov, V. S., Zakgeim, A. L., Mizerov, M. N.
Format: Article
Language:English
Subjects:
EMISSION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
Physics
Physics and Astronomy
Physics of Semiconductor Devices
PNICTIDES
QUANTUM WELLS
SUPERLATTICES
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Summary:A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782610060205