Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses

The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2009-12, Vol.43 (13), p.1667-1670
Main Authors: Katsoev, L. V., Katsoev, V. V., Il’ichev, É. A.
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CONSTRUCTION
DIMENSIONS
ELECTRIC POTENTIAL
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERACTIONS
IONIZING RADIATIONS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MEASURING INSTRUMENTS
Microelectronic Devices and Systems
OPTIMIZATION
Physics
Physics and Astronomy
PNICTIDES
RADIATION DETECTORS
RADIATIONS
RECOMBINATION
SEMICONDUCTOR DETECTORS
SENSORS
THICKNESS
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Summary:The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region’s thickness and the voltage applied across the sensor under conditions of the presence of recombination processes.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782609130119