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Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses
The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to...
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| Published in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2009-12, Vol.43 (13), p.1667-1670 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c316t-76e6211bd3dad44e9bebad7640df238ba52e0637472e6b631e044c84e31b1efb3 |
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| cites | cdi_FETCH-LOGICAL-c316t-76e6211bd3dad44e9bebad7640df238ba52e0637472e6b631e044c84e31b1efb3 |
| container_end_page | 1670 |
| container_issue | 13 |
| container_start_page | 1667 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 43 |
| creator | Katsoev, L. V. Katsoev, V. V. Il’ichev, É. A. |
| description | The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. The model makes it possible to calculate the output current of the detector as a function of its active-region’s thickness and the voltage applied across the sensor under conditions of the presence of recombination processes. |
| doi_str_mv | 10.1134/S1063782609130119 |
| format | article |
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V.</creatorcontrib><creatorcontrib>Katsoev, V. V.</creatorcontrib><creatorcontrib>Il’ichev, É. A.</creatorcontrib><title>Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The model describing the physical processes accompanying the interaction of heavy charged particles with an ionizing-radiation semiconductor detector is proposed. The problem of optimization of electrical characteristics and construction of the detector cell is solved. 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| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2009-12, Vol.43 (13), p.1667-1670 |
| issn | 1063-7826 1090-6479 |
| language | eng |
| recordid | cdi_osti_scitechconnect_21562382 |
| source | Springer Link |
| subjects | ARSENIC COMPOUNDS ARSENIDES CHARGED PARTICLES CONSTRUCTION DIMENSIONS ELECTRIC POTENTIAL FUNCTIONS GALLIUM ARSENIDES GALLIUM COMPOUNDS INTERACTIONS IONIZING RADIATIONS Magnetic Materials Magnetism MATERIALS SCIENCE MEASURING INSTRUMENTS Microelectronic Devices and Systems OPTIMIZATION Physics Physics and Astronomy PNICTIDES RADIATION DETECTORS RADIATIONS RECOMBINATION SEMICONDUCTOR DETECTORS SENSORS THICKNESS |
| title | Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses |
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